Listar Ingeniería por autor "Hilleringmann, Ulrich"
Mostrando ítems 1-1 de 1
-
A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application
Kaufmann, Ivan Rodrigo; Zerey, Onur; Meyers, Thorsten; Reker, Julia; Vidor, Fábio Fedrizzi; Hilleringmann, Ulrich (2021) [Artículo de periódico]Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain ...