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Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

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Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

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Título Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC
Autor Pitthan Filho, Eduardo
Reis, Roberto dos
Corrêa, Silma Alberton
Schmeisser, Dieter
Boudinov, Henri Ivanov
Stedile, Fernanda Chiarello
Abstract Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.
Contido em Journal of applied physics. New York. Vol. 119, no. 2 (Jan. 2016), p. 025307-1-025307-6
Assunto Capacitores MOS
Carboneto de silício
Dióxido de silício
Filmes finos dielétricos : Crescimento : Tratamento térmico
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/159490
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