• Analysis and optimization of mesh-based clock distribution architectures 

      Wilke, Gustavo Reis (2008) [Tese]
      Variações ambientais e de processo representam um grande desafio a ser vencido pelas redes de distribuição de relógio. O efeito das variações nos atrasos da rede de distribuição de relógio não pode ser previsto com precisão ...
    • Circuit-level design impact on variability and soft errors robustness 

      Brendler, Leonardo Heitich (2020) [Dissertação]
      Physical limitations were found in MOSFET devices with the advancement in microelectronics. To overcome these limitations, multigate devices, such as the FinFET technology, were introduced, allowing the continuity of the ...
    • Clock mesh optimization 

      Flach, Guilherme Augusto (2010) [Dissertação]
      Malhas de relógio são arquiteturas de rede de relógio adequadas para distribuir confiavelmente o sinal de relógio na presença de variações de processo e ambientais. Tal propriedade se torna muito importante nas tecnologias ...
    • A physics-based statistical random telegraph noise model 

      Silva, Maurício Banaszeski da (2016) [Tese]
      Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) are performance limiters in many analog and digital circuits. For small area devices, the noise power spectral density can easily vary by many orders of magnitude, ...
    • Radiation robustness of XOR and majority voter circuits at finFET technology under variability 

      Aguiar, Ygor Quadros de (2017) [Dissertação]
      Advances in microelectronics have contributed to the size reduction of the technological node, lowering the threshold voltage and increasing the operating frequency of the systems. Although it has positive outcomes related ...
    • State-of-the-art 3-D Monte Carlo Device Simulation : from n-MOSFETs to n-FinFETs 

      Furtado, Gabriela Firpo (2021) [Tese]
      A novel 3-D TCAD Monte Carlo n-type semiconductor device simulator is presented in this work. The first step to achieve such comprehensive simulator was to develop a n-type bulk-Si simulator to be used as the basis for the ...