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Ion radiation induced diffusion of xe implanted into a polymer film

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Ion radiation induced diffusion of xe implanted into a polymer film

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Título Ion radiation induced diffusion of xe implanted into a polymer film
Autor Kaschny, Jorge Ricardo de Araujo
Amaral, Livio
Behar, Moni
Fink, Dietmar
Abstract In the present work, we have studied the most important parameters which can influence the radiation induced diffusion mechanism of Xe ions implanted into a photoresist film. With this aim, we have Ar post-bombarded the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition, the implantation fluences, as well as the ion species used in the bombardment, were changed. The results show that the radiation induced diffusion process undergoes a trapping-detrapping mechanism. The trapping probability is proportional to the implanted fluence, and the detrapping one depends on the kind of ion used in the bombarding experiment. Finally, it is shown that the nuclear energy transfer plays an important role in the radiation induced diffusion mechanism.
Contido em Journal of applied physics. Woodbury. Vol. 72, no. 11 (Dec. 1992), p. 5139-5144
Assunto Fisica da materia condensada
Implantacao de ions
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/95345
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