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Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

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Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

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Título Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography
Autor Singh, Vikram
Satyanarayana, Vardhineedi Sri Venkata
Batina, Nikola
Reyes, Israel Morales
Sharma, Satinder Kumar
Kessler, Felipe
Scheffer, Francine Ramos
Weibel, Daniel Eduardo
Ghosh, Subrata
Gonsalves, Kenneth E.
Abstract Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm². The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.
Contido em Journal of micro-nanolithography mems and moems. Bellingham. Vol. 13, no. 4 (Oct. 2014), 043002, 9 p.
Assunto Copolímeros
Litografia por feixe de elétrons
Polímeros
Ultravioleta extrema
[en] Contrast
[en] E-beam lithography
[en] Etch resistance
[en] Extreme ultraviolet lithography
[en] Nonchemically amplified resist
[en] Postapply bake
[en] Postexposure bake
[en] Sensitivity
[en] Surface roughness
Origem Estrangeiro
Tipo Artigo de periódico
URI http://hdl.handle.net/10183/116515
Arquivos Descrição Formato
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